Structure:

- Si wafer
- the grating is formed on the layer of SiO2

Pattern types:

1- Dimensional (in Z-axis direction)

Step height:

TGZ1 - 21,6±1.5 nm

Period:

3±0,05 µm

Chip size:

5x5x0,5 mm

Effective area:

central square 3x3 mm