Stampa

Un sistema UHV di analisi superficiale per la caratterizzazione dei film sottili

Misura la composizione superficiale dei primi pochi nanometri e/o micron di campioni solidi

La Workstation SIMS permette SIMS statico e dinamico ad alte prestazioni per una dettagliata analisi della composizione superficiale e per il profiling in profonditĂ .

Overview

The SNMS facility complements the SIMS technique, providing quantification for thin film composition measurements.

Hiden’s new SIMS-on-a-Flange provides a complete SIMS facility on a single UHV conflat type flange.

Features

Specifications

Mass range

300, 510 or 1000 amu

Minimum detectable concentration

PPM/PPB level contamination analysis

SIMS - Secondary Ion Mass Spectrometry 

Yes

Analysis of ions ejected from sample surface

Yes (primary ions of oxygen, argon or caesium)

SNMS - Secondary Neutral Mass Spectrometry

Yes

Analysis of ions ejected from sample surface

Yes (primary ions of oxygen, argon or caesium)

Depth resolution

+/- 5 nanometer

Minimum detectable concentration - SIMS

1016 atoms per cubic centimeter - species dependent

Minimum detectable concentration - SNMS

0.01% - species dependant

UHV multiport chamber

Yes

Accommodates additional instrumentation

Yes (E.g. XPS)