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Test grating TGQ1 is intended for:

 

 

 

 

 

 

 

 

Grating description

Structure

- Si wafer
- the grating is formed on the layer of SiO2

Pattern types

3-Dimensional array of small rectangles

Period

3.0±0,05 µm

Height

20nm ±1,5 nm*

Rectangles side size:

1,5±0,35 µm

Chip size

5x5x0,5 mm

Effective area

central square 3x3 mm

 

* the average meaning based on the measurements of 5 gratings (from the batch of 300 gratings) by SPM calibrated by PTB certified grating TGZ1. Basic step height can vary from the specified one within ±10% (for example step height can be 22±1.5nm)

 


Fig.1 SPM image of TGQ1 grating