Thin Films, Plasma and Surface Engineering
RGA, plasma ion analysis, surface analysis and SIMS end point detection
Automatic Surface Analysis System
Measures the surface composition of the first few nanometers and/or micrometers depth of solid samples
The Hiden AutoSIMS is a self-contained, automated, SIMS tool for routine and repetitive surface analysis, ideal for the measurement of thin films, contamination and doping from the top monolayer to many microns in both conductive and insulating material.
A UHV surface analysis system for thin film depth profiling
A design breakthrough for surface analysis
The Hiden Compact SIMS tool is designed for fast and easy characterisation of layer structures, surface contamination and impurities with sensitive detection of positive ions being assisted by the oxygen primary ion beam and provides isotopic sensitivity across the entire periodic table. The ion gun geometry set to provide is ideal for nanometre depth resolution and near surface analysis.
A SIMS analyser
When used in a SIMS or FIB-SEM system - provides for surface composition analysis and elemental mapping
The Hiden EQS is a high transmission quadrupole secondary ion mass spectrometry, SIMS, detector including a 45 degree electrostatic sector for simultaneous ion energy analysis. Ions are collected on the axis of the device which makes it very popular for fitting as an after-market detector to a wide variety of surface analysis instrumentation.
A system for UHV temperature programmed desorption (TPD) studies
Measures the temperature programmed desorption from solid thin film samples
The TPD Workstation features a multiport UHV chamber with heated sample stage coupled to a high precision triple filter analyser with digital pulse ion counting detector for ultimate sensitivity and time resolution.
A system for ion etch control and optimum process quality
End Point detection for ion beam and plasma etch processes
The IMP-EPD is a differentially pumped, ruggedised secondary ion mass spectrometer for the analysis of secondary ions from the ion beam etch process. The system includes integrated software with process specific algorithms developed for optimum process control.
A system for multiple source monitoring in MBE deposition applications
For molecular beam analysis and deposition rate control
Molecular beam sources require accurate control for reproducible production quality thin film growth. Hiden’s XBS system provides in-situ monitoring of multiple sources with real-time signal output for precise control of the deposition.
An advanced Langmuir probe for plasma diagnostics
Measures electrical properties of low pressure plasma
Routine monitoring of the I-V plasma characteristic by the Hiden ESPion probe gives direct information relating to plasma stability and reproducibility. Automatic real-time extrapolation of plasma parameters gives detailed information on plasma properties for use in characterisation and uniformity monitoring.
A mass and energy analyser for plasma diagnostics
Measures mass spectra of ions, neutrals and radicals in plasma
Hiden plasma probes measure some of the key plasma parameters and provide detailed information relating to plasma reaction chemistry.
A residual gas analyser for vacuum process analysis
Measures the vacuum process gas composition, contamination and leak detection
The HPR-30 is a residual gas analyser configured for analysis of gases and vapours in vacuum processes and for vacuum diagnostics. The system is fully configurable for individual process applications such as CVD, plasma etching, MOCVD, process gas purity and in-process contaminant monitoring.
A 5 KeV Argon or Oxygen ion source for UHV surface analysis applications
Primary ion source for SIMS/SNMS analysis and elemental mapping of electropositive species
The IG20 features a high brightness electron impact gas ion source which is designed specifically for oxygen capability but is also suitable for use with inert and other gases.
A 5 KeV Caesium ion gun for UHV surface analysis applications
Primary ion source for SIMS/SNMS analysis and elemental mapping of electronegative species
The IG20 features a high brightness electron impact gas ion source which is designed specifically for oxygen capability but is also suitable for use with inert and other gases.
A SIMS/SNMS analyser
When used in SIMS/SNMS system- provides for surface composition and elemental mapping
The Hiden MAXIM quadrupole SIMS analyser is a state of the art secondary ion mass spectrometer for positive and negative, static, dynamic and neutral analytical applications.
The MAXIM analyser system includes an integral energy filter for ion acceptance at 30° to the probe axis, high transmission SIMS extraction optics, triple mass filter, pulse ion counting detector and control electronics.
A UHV surface analysis system for thin film depth profiling
Measures the surface composition of the first few nanometers and/or micrometers depth of solid samples
The Hiden SIMS Workstation provides for high performance static and dynamic SIMS applications for detailed surface composition analysis and depth profiling.
For the analysis of positive and negative ions, neutrals, and radicals from plasma processes
Measures mass spectra and energy distributions of ions, neutrals and radicals in plasma
The EQP system directly measures mass and energy of both positive and negative process ions, measuring masses up to 2500 amu and ion energies up to 1000 eV.