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Plasma Cracker Source PCS-RF |
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Features:
- RF Auto Tuning Unit for inductively coupled Plasma Source
- RF Atom Source: Inductively coupled - 13.56 MHz
- Unique coaxial design: For easy mounting on virtually all vacuum systems.
- Operation at Low Flux for Dilute Nitrogen Growth Applications (GaAsN)
- Continously tunable from very small to very high atom fluxes
- Filamentless
design: The absence of a hot filament to create the plasma, permits
operation with most gases including reactive gases such as O2,
chlorine, N2, and H2.
- Integral water cooling jacket: For minimum system heat load.
Applications:
- Nitrogen
Nitriding: GaN, AlN, InN, SiN
Doping: ZnSe
Alloys: GaAlAsN
Cleaning
Growth enhancement / surfactant In-situ etching
- Oxygen
Oxide growth: HTc superconductors, optical coatings, dielectrics, ceramic growth, Al2O3
Reactive sputtering, laser ablation
Oxygen cleaning, Oxidation kinetics
Post growth oxidation/low temperature: SiO2
- Hydrogen
Cleaning
Growth enhancement / surfactant
- Chlorine
In-situ etching
- Methane
SiC
Product description:
The Oxford Scientific RF plasma source is a truly UHV compatible
source. Fully bakeable, with an all-welded stainless steel vacuum
envelope and outstanding cooling from a water-jacket which surrounds
the hot zone, it is suitable for use in vacuum levels ranging from HV
to those found in the most demanding MBE applications. The RF Plasma
Atom Source is intended principally for low energy and low damage
surface treatment and sample growth. A specially designed aperture
inhibits the release of ions from the plasma while allowing neutral
atoms and molecules to effuse out. The particles released are largely
thermalised (<1eV) and are therefore suitable for use in sensitive
semiconductor growth, cleaning and surface treatment applications. Any
residual ion current can be removed using the ion trap option where
this may be of concern. The water circuit is an entirely stainless
steel (no copper tubing) welded construction giving excellent
mechanical, thermal and therefore operational stability.
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