Pra.Ma.

Features:

• UHV-compatible (achievable base pressure better than 5 x 10-11 mbar in the growth chamber)
• High precision and high quality standard (made in Germany)
• Easy-to-handle
• State-of-the-art technology: Substrate temperature and film thickness uniformities better than +/-1%
• Ready for use after installation on site

Applications:

Preparation of epitaxial films (semiconductors, metlas, dielectrics and organics) on 1”, 2” or 3” wafers for various scientific applications.

Product description:

RS-3 is a complete MBE system based on three chambers: a growth chamber, a combined buffer and preparation chamber and a load-lock chamber with the possibility to mount additional chambers (like surface analysis chambers, further growth or processing chambers).